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Advance Technical Information
Standard Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
IXTH 36P10
V DSS
I D25
R DS(on)
= -100 V
= -36 A
= 75 m ?
Symbol
Test Conditions
Maximum Ratings
TO-247 AD
V DSS
V DGR
V GS
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
Continuous
-100
-100
± 20
V
V
V
V GSM
I D25
I DM
Transient
T C = 25 ° C
T C = 25 ° C, pulse width limited by T J
± 30
-36
-144
V
A
A
D (TAB)
I AR
E AR
P D
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
-36
30
180
A
mJ
W
G = Gate,
S = Source,
D = Drain,
TAB = Drain
T J
-55 ... +150
° C
T JM
T stg
150
-55 ... +150
° C
° C
Features
? International standard package
T L
M d
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
300 ° C
1.13/10 Nm/lb.in.
6 g
JEDEC TO-247 AD
? Low R DS (on) HDMOS TM process
? Rugged polysilicon gate cell structure
? Unclamped Inductive Switching (UIS)
rated
? Low package inductance (<5 nH)
- easy to drive and to protect
Symbol
V DSS
V GS(th)
Test Conditions
V GS = 0 V, I D = -250 μ A
V DS = V GS , I D = -250 μ A
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
-100 V
-3.0 -5.0 V
Applications
? High side switching
? Push-pull amplifiers
? DC choppers
? Automatic test equipment
I GSS
I DSS
R DS(on)
V GS = ± 20 V DC , V DS = 0
V DS = 0.8 V DSS
V GS = 0 V
V GS = -10 V, I D = 0.5 I D25
T J = 25 ° C
T J = 125 ° C
± 100
-25
-1
75
nA
μ A
mA
m ?
Advantages
? Easy to mount with 1 screw
(isolated mounting screw hole)
? Space savings
? High power density
? 2002 IXYS All rights reserved
98908 (2/02)
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